CSC3930 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CSC3930
SOT-23
Formed SMD Package
1
2
Marking Symbol : V
Complementary CSA1532
Optimum for RF Amplification of FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature
T_stg
VALUE
30
20
5
30
150
150
- 55 to +150
Electrical Characterstics (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
Collector Cut Off Current
I_CBO
V_CB = 10V, I_E = 0
DC Current Gain
*h_FE
V_CB = 10V,I_E = -1mA
70
Transition Frequency
f_T
V_CB=10V, I_E = -1mA, f=200 MHz 150
Noise Figure
NF
V_CB=10V, I_E = -1mA, f = 5MHz
Reverse Transfer Impedance
Z_rb
V_CB=10V, I_E = -1mA, f=2MHz
Common Emitter Reverse-
Transfer Capacitance
C_re
V_CE =10V,Ic = 1mA,f=10.7 MHz
UNITS
V
V
V
mA
mW
ºC
ºC
TYP MAX _UNIT
0.1
µA
220
MHz
4
dB
50
Ω
1.5
pF
*h_FE Classification
Marking
B : 70 - 140
VB
C : 110 - 220
VC
Continental Device India Limited
Data Sheet
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