CSC388ATM Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC388ATM
TO - 92
Plastic Package
TV Final Picture IF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j, T_stg
VALUE
30
25
4
50
- 50
300
-55 to +125
UNIT
V
V
V
mA
mA
mW
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
DC Current Gain
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
Collector Output Capacitance
Collector- Base Time Constant
Transition Frequency
Power Gain
I_CBO V_CB=30V, I_E = 0
-
I_EBO
V_EB=3, I_C=0
-
V_CEO I_C=10mA, I_B=0
25
h_FE
V_CE=12.5V, I_C=12.5mA
20
V_CE(sat) I_C=15mA, I_B=1.5mA
-
V_BE(sat) I_C=15mA, I_B=1.5mA
-
C_ob V_CB=10V, I_E=0,f=1MHz
0.8
C_c.rbb' V_CB=10V, I_E= - 1mA
-
f=30MHz
f_T
V_CE=12.5V, I_C=12.5mA
300
G_pe V_CC=12.5V, I_E= - 12.5mA
28
f=45MHz
TYP
-
-
-
-
-
-
-
-
-
-
MAX
100
1.0
-
200
0.2
1.5
2.0
25
-
36
UNIT
nA
µA
V
V
V
pF
ps
MHz
dB
Continental Device India Limited
Data Sheet
Page 1 of 3