CSC3619 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON PLASTIC POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC POWER TRANSISTOR
CSC3619
TO-126
ECB
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=45 deg C
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
Ptot
Tj
Tstg
300
300
5.0
100
1.5
10
150
-55 to +150
V
V
V
mA
W
W
deg C
deg C
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth (j-a)
Rth (j-c)
83.3
K/W
10.5
K/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP MAX
Collector Base Voltage
VCBO IC=0.1A, IE=0
300
-
-
Collector Emitter Voltage
VCEO IC=10mA, IB=0
300
-
-
Emitter Base Voltage
VEBO IE=1mA, IC=0
5.0
-
-
Collector Cut off Current
ICBO VCB=240V, IE=0
-
-
1.0
DC Current Gain
hFE IC=20mA, VCE=10V 30
-
200
Collector Emitter Saturation Voltage
VCE(Sat) IC=10mA,IB=1mA
-
-
1.0
Base Emitter Saturation Voltage
VBE(Sat) IC=10mA,IB=1mA
-
-
1.0
Dynamic Characteristics
Collector Output Capacitance
Cob VCB=30V, IE=0
-
3.0
-
f=1MHz
Transition Frequency
ft
VCE=10V, IC=20mA 50
-
-
UNIT
V
V
V
uA
V
V
pF
MHz
Continental Device India Limited
Data Sheet
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