CSC3420 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
CSC3420
TO-126
Plastic Package
E _CB
Strobe Flash and Medium Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CES
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current (DC)
I_C
Collector Current (Pulse)
*I_CP
Base Current
I_B
Collector Power Dissipation T_a=25ºC
P_C
Collector Power Dissipation T_c=25ºC
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
*Pulse Width : Pulse Width=10ms, Duty Cycle=30%
Value
50
40
20
8.0
5.0
8.0
1.0
1.5
10
150
- 55 to +150
UNIT
V
V
V
V
A
A
A
W
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut Off Current
I_CBO
V_CB=40V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=8V, I_C=0
Collector Emitter Voltage
V_CEO
I_C=10mA, I_B=0
20
DC Current Gain
h_FE
*V_CE=2V, I_C=0.5A
140
V_CE=2V, I_C=4A
70
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=4A, I_B=0.1A
Base Emitter On Voltage
V_{BE (on)}
V_CE=2V, I_C=4A
Transition Frequency
Collector Output Capacitance
f_T
V_CE=2V, I_C=0.5A
C_ob V_CB=10V, I_E=0, f=1MHz
TYP MAX UNIT
100 nA
100 nA
V
600
1.0
V
1.5
V
100
MHz
40
pF
*h_FE Classification
CSC3420Rev150606E
Y : 140 - 240 , GR : 200 - 400 : BL : 300 - 600
Continental Device India Limited
Data Sheet
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