CSC3329 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC3329
TO-92
Plastic Package
Complementary CSA1316
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Storage Temperature
Junction Temperature
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_C
T_stg
T_j
VALUE
80
80
5
100
20
400
- 55 to +125
125
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Cut off Current
I_CBO
V_CB=80V, I_E = 0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C = 0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
80
DC Current Gain
h_FE *
V_CE=6V, I_C=2mA
200
Collector Emitter Saturation Voltage V_CE(sat)
I_C=10mA, I_B=1mA
Base Emitter on Voltage
V_BE(on)
V_CE=6V, I_C=2mA
Base Spreading Resistance
rbb' V_CE=6V, I_C=1mA,f=100MHz
Transition Frequency
f_T
V_CE=6V, I_C= -1mA,
f=100MHz
Collector Output Capacitance
C_ob
I_E=0, V_CB=10V,f=1MHz
V_CE =6V, I_C=0.1mA,
f=10Hz,Rg=10kΩ
Noise Figure
NF
V_CE =6V, I_C=0.1mA,
f=10KHz,Rg=10kΩ
V_CE =6V, I_C=0.1mA,
f=10KHz,Rg=100Ω
TYP
0.6
2.0
80
6.2
2.5
*h_FE Classification
GR : 200 - 400,
BL : 350 - 700
UNITS
V
V
V
mA
mA
mW
ºC
ºC
MAX
100
100
700
0.1
6.0
2.0
UNITS
nA
nA
V
V
V
Ω
MHz
pF
dB
Continental Device India Limited
Data Sheet
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