CSC3255 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL POWER TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSC3255
TO-220
High-Speed Switching Applications.
Complementary CSA1291
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
80
Collector -Emitter Voltage
VCEO
60
Emitter Base Voltage
VEBO
5.0
Collector Current
IC
10.0
Peak
ICP
12.0
Collector Power Dissipation @ Tc=25 deg C PC
40.0
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector Emitter Voltage
VCEO IC=1mA, IB=0
60 -
Collector Base Voltage
VCBO IC=1mA, IE=0
80 -
Emitter Base Voltage
VEBO IE=1mA, IC=0
5.0 -
Collector Cut off Current
ICBO VCB=40V, IE=0
-
-
Emitter Cut off Current
IEBO VBE=4V,IC=0
-
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=5A, IB=0.25A
-
-
DC Current Gain
hFE
IC=1A, VCE=2V
70 -
Dynamic Characteristics
Transition Frequency
ft
VCE=5V, IC=1A,
- 100
Switching Time
Turn on time
ton
VCC=20V, VBE=5V
- 0.1
Storage time
tstg
IB1=1B2=.0.25A, IC=5A,
- 0.5
Fall time
tf
Pw=20us, Duty Cycle=1%
- 0.1
MAX
-
-
-
100
100
0.6
250
-
-
-
-
UNIT
V
V
V
A
A
W
deg C
deg C
UNIT
V
V
V
uA
uA
V
MHz
us
us
us
hFE Classification
Q : 70 -140 ;
R : 100 - 200 ; S : 160 - 250 ;
Continental Device India Limited
Data Sheet
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