CSC3198 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CCSCC83015908
TO-92
Plastic Package
ECB
General Purpose and Switching Application
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
VALUE
60
50
5
150
50
625
125
- 55 to +125
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP MAX
Collector Cut Off Current
I_CBO
V_CB=60V, I_E = 0
0.1
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C = 0
0.1
DC Current Gain
h_FE
*I_C=2mA, V_CE=6V
70
700
I_C=150mA, V_CE=6V
25
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=100mA, I_B=10mA
0.25
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=100mA, I_B=10mA
1.0
DYNAMIC CHARACTERISTICS
DESCRIPTION
Collector Output Capacitance
Transition Frequency
Noise Figure
Base Intrinsic Resistance
SYMBOL TEST CONDITION MIN
C_ob
I_E=0, V_CB=10V, f=1MHz
f_T
I_C=1mA, V_CE=10V,
80
NF
V_CE=6V, I_C=0.1mA,
Rg=10KΩ, f=1KHz
rbb'
I_E=1mA, V_CB=10V,
f=30MHz
TYP
50
MAX
3.5
10
UNITS
V
V
V
mA
mA
mW
ºC
ºC
UNITS
µA
µA
V
V
UNITS
pF
MHz
dB
Ω
*h_FE Classification
CSC3198Rev100103E
O : 70 - 140, Y : 120 - 240, GR : 200 - 400, BL : 350 - 700
Continental Device India Limited
Data Sheet
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