CSC3063 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
CSC3063
TO-126
Plastic Package
ECB
Video output Amplifier
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Collector Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_CP
I_C
P_C
T_j
T_stg
Value
300
300
7
200
100
1.2
150
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
Collector Emitter On Voltage
Collector Emitter Saturation Voltage
SYMBOL
V_CBO
V_CEO
V_EBO
h_FE
V_{BE (on)}
V_{CE (sat)}
TEST CONDITION
I_C=10µA, I_E=0
I_C=0.1mA, I_B=0
I_E=10µA, I_C=0
I_C=5mA, V_CE=50V
I_C=30mA, V_CE=10V
I_C=30mA, I_B=3mA
MIN
300
300
7
50
Dynamic Characteristics
Transition Frequency
Output Capacitance
f_T
I_C=20mA, V_CB=30V,
70
C_ob I_E=0,V_CB=30V, f=0.1MHz
TYP
2.4
UNIT
V
V
V
mA
mA
W
ºC
ºC
MAX
250
1.2
1.5
UNIT
V
V
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3