CSC2786 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC2786
TO-92
Plastic Package
ECB
For use in FM RF Amplifier
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
SYMBOL
V_CEO
V_CBO
V_EBO
Base Current
I_B
Collector Current
I_C
Power Dissipation @ T_a=25ºC
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
VALUE
20
30
4
20
20
250
+150
- 55 to + 150
UNITS
V
V
V
mA
mA
mW
ºC
ºC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB =30V, I_E = 0
Emitter Cutoff Current
I_EBO
V_EB =4V, Ic = 0
Collector Emitter Saturation Voltage V_CE(sat)
I_C = 10mA, I_B = 1.0mA
Base Emitter On Voltage
V_BE(on)
V_CE = 6.0V,Ic = 1.0mA
DC Current Gain
*h_FE
V_CE = 6.0V, I_C = 1.0 mA
Transition Frequency
f_T
V_CE = 6.0V, Ic = - 1.0mA
Power Gain
G_pe
V_CE = 6.0V, I_E = - 1.0mA, R_G =50kΩ
f = 100MHz
Collector to Base Time Constant
Cc rb'b V_CE = 6.0V, I_E = - 1.0mA, f=31.9MHz
Output Capacitance
C_ob
V_CB = 6V, I_E =0, f =1MHz
Noise Figure
NF
V_CE = 6.0V, I_E = - 1.0mA, R_G =50kΩ
f = 100MHz
MIN TYP
0.72
40
400
18
MAX
100
100
0.30
180
UNITS
nA
nA
V
V
MHz
dB
15
ps
1.30 pF
5.00 dB
*h_FE Classifications
MF : 40 - 80 LF : 60 - 120 KF : 90 - 180
Continental Device India Limited
Data Sheet
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