CSC2713 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CSC2713
SOT-23
Formed SMD Package
1
2
MARKING
CSC2713 =13
CSC2713G =13G
CSC2713L =13L
Complementary CSA1163
Audio Frequency General Purpose Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
VALUE
120
120
5
100
20
150
125
- 55 to +125
Electrical Characterstics (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
Collector Cut Off Current
I_CBO
V_CB=120V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
Collector Emitter Saturation
Voltage
h_FE
V_{CE (sat)}
V_CE=6V, I_C=2mA
200
I_C=10mA, I_B=1mA
Transition Frequency
f_T
V_CE=6V, I_C=1mA
Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Noise Figure
NF
V_CE=6V, I_C=0.1mA, f=1KHz,
R_g=10kΩ
UNITS
V
V
V
mA
mA
mW
ºC
ºC
TYP MAX _UNIT
100
nA
100
nA
700
0.3
V
100
MHz
4
pF
10
dB
h_FE Classification
CSC2713Rev_1 021203E
G : 200 - 400 L : 350 - 700
Continental Device India Limited
Data Sheet
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