CSC2712 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSC2712
SILICON PLANAR EPITAXIAL TRANSISTOR
N-P-N transistor
Marking
CSC2712Y=1E
CSC2712GR(G)=1F
CSC2712BL(L)=1G
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (peak value)
Total power dissipation at T_amb = 25°C
Junction temperature
D.C. current gain
–I_C = 2 mA; –V_CE = 6V
Transition frequency
I_C = 1 mA; V_CE = 10 V
Noise figure at R_S = 10 KW
I_C = 0.1 mA; V_CE = 6V;
f = 1 kHz
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
h_FE
f_T
max.
max.
max.
max.
max.
max.
60 V
50 V
5V
150 mA
150 mW
150 ° C
min.
70
max. 700
min.
80 MHz
F
max
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 3