CSC2330 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON HIGH VOLTAGE TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON HIGH VOLTAGE TRANSISTOR
CSC2330
TO-237
BCE
Intended For Video Output Stages In Black & White in Colour Television Receivers
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25 deg C
Operating And Storage Junction
Temperature Range
Thermal Resistance Junction to Ambient
SYMBOL
VCBO
VCEO
VEBO
IC
PD
Tj, Tstg
Rth (j-a)
VALUE
300
300
7.0
100
1.0
-55 to +150
130
UNIT
V
V
V
mA
W
deg C
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Base Voltage
VCBO
IC=100uA, IE=0
300
Collector -Emitter Voltage
VCEO IC=5mA, IB=0
300
Emitter Base Voltage
VEBO
IE=100uA, IC=0
7.0
Collector Cut off Current
ICBO
VCB=200V, IE=0
-
Emitter Cut off Current
IEBO
VEB=3V, IC=0
-
DC Current Gain
hFE
IC=20mA,VCE=10V
40
Collector Emitter Saturation Voltage
VCE(Sat) IC=10mA,IB=1mA
-
TYP
-
-
-
-
-
-
-
MAX
-
-
-
100
20
240
0.5
UNIT
V
V
V
nA
nA
V
Dynamic Characteristics
Gain Bandwidth Product
Output Capacitance
ft
VCE=30V,IC=10mA,
-
50
-
MHz
Cob
VCB=10V, IE=0
-
4.0
-
pF
f=1MHz
-
-
-
pF
CLASSIFICATION
hFE
R
40-80
O
70-140
Y
120-240
Continental Device India Limited
Data Sheet
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