CSC2120 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CSC2120
TO-92
BCE
Audio Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified )
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
35
Collector -Emitter Voltage
VCEO
30
Emitter Base Voltage
VEBO
5.0
Collector Current Continuous
IC
800
Emitter Current
IE
800
Collector Power Dissipation
PC
600
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector Cut off Current
ICBO
VCB=35V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
-
Collector -Emitter Voltage
VCEO IC=10mA, IB=0
30
-
DC Current Gain
hFE*(1) IC=100mA, VCE=1V 100
-
hFE*(2) IC=700mA, VCE=1V
35
-
Collector Emitter Saturation Voltage VCE(Sat) * IC=500mA, IB=20mA
-
-
Base Emitter Voltage
VBE(on) IC=10mA, VCE=1V
0.5
-
Dynamic Characteristics
Collector Output Capacitance
Cob
VCB=10V, IE=0,
-
13
f=1MHz
Transition Frequency
ft
VCE=5V,IC=10mA,
*(1)hFE CLASSIFICATION
0 : 100 - 200,
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
-
120
Y : 160 - 320,
UNIT
V
V
V
mA
mA
mW
deg C
MAX
100
100
-
320
-
0.5
0.8
-
UNIT
nA
nA
V
V
V
pF
-
MHz
Continental Device India Limited
Data Sheet
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