CSC2002 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC2002
TO-92
Plastic Package
Designed for use in Driver Stage of High Voltage Audio Equipments.
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Storage Temperature
Junction Temperature
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_C
T_stg
T_j
VALUE
60
60
5
300
60
600
- 55 to +150
+150
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
SYMBOL
I_CBO
I_EBO
h_FE ⁽¹⁾ *
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter Voltage
Transition Frequency
Collector to Base Capacitance
V_{CE (sat)} *
V_{BE (sat)} *
V_{BE *}
f_T
C_ob
TEST CONDITION
V_CB=60V, I_E = 0
V_EB=5V, I_C = 0
V_CE=1V, I_C=50mA
V_CE=2V, I_C=300mA
I_C=300mA, I_B=30mA
I_C=300mA, I_B=30mA
V_CE=6V, I_C=10mA
V_CE=6V, I_C= -10mA,
I_E=0, V_CB=6V, f=1MHz
MIN TYP
90
30
0.6
50
UNITS
V
V
V
mA
mA
mW
ºC
ºC
MAX
100
100
400
0.6
1.2
0.7
15
UNITS
nA
nA
V
V
V
MHz
pF
* Pulsed PW <350µs, Duty Cycle <2%
h_FE ⁽¹⁾ Classification
M : 90 - 180,
L : 135 - 270,
K : 200 - 400
Continental Device India Limited
Data Sheet
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