CSC1959 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CSC1959
TO-92
BCE
ECB
Audio Frequency Low Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
35
Collector -Emitter Voltage
VCEO
30
Emitter Base Voltage
VEBO
5.0
Collector Current
IC
500
Emitter Current
IE
-500
Collector Power Dissipation
PC
500
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector Cut off Current
ICBO
VCB=35V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
-
DC Current Gain
hFE(1) IC=100mA, VCE=1V
70
-
hFE(2) IC=400mA, VCE=6V
25
-
Collector Emitter Saturation Voltage VCE(Sat) IC=100mA, IB=10mA
-
-
Base Emitter Voltage
VBE(on) IC=100mA, VCE=1V
-
-
Dynamic Characteristics
Collector Output Capacitance
Cob
VCB=6V, IE=0,
-
7.0
f=1MHz
Transition Frequency
hFE(1) CLASSIFICATION
hFE(2)
ft
VCE=6V,IC=20mA,
-
300
0 : 70 - 140 Y : 120 - 240,
0 : 25 M Y : 40 Min,
UNIT
V
V
V
mA
mA
mW
deg C
MAX
100
100
240
-
0.25
1.0
-
UNIT
nA
nA
V
V
pF
-
MHz
Continental Device India Limited
Data Sheet
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