CSC1941 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CSC1941
TO-237
BCE
Audio Frequency Amplifier Applications
Complementary CSA916
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
160
Collector -Emitter Voltage
VCEO
160
Emitter Base Voltage
VEBO
5.0
Collector Current DC
IC
50
Collector Current Peak *
IC
100
Collector Power Dissipation
PT
1.0
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
*PW=10ms, duty cycle=50%
UNIT
V
V
V
mA
mA
W
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
ICBO
VCB=160V, IE=0
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
DC Current Gain
hFE(1) ** IC=1mA,VCE=10V
50
hFE(2) ** IC=10mA,VCE=10V
90
Base Emitter On Voltage
VBE(on) ** IC=10mA,VCE=10V
650
Collector Emitter Saturation Voltage VCE(Sat) ** IC=20mA,IB=2mA
-
Base Emitter Saturation Voltage
VBE(Sat) ** IC=20mA,IB=2mA
-
TYP MAX
-
100
-
100
-
-
-
400
-
750
-
0.60
-
1.0
UNIT
nA
nA
mV
V
V
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
hFE (2) ** CLASSIFICATION
ft
VCE=10V,IC=10mA,
Cob
VCB=10V, IE=0
f=1MHz
MA : 90-180
50
-
-
-
LA : 135-270
-
MHz
3.0
pF
KA : 200-400
** PW=350us, Duty Cycle=2% Pulsed
Continental Device India Limited
Data Sheet
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