CSC1906 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC1906
TO-92
Plastic Package
ECB
VHF Amplifier Mixer, Local Oscillator
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Power Dissipation @ T_a=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j, T_stg
VALUE
30
19
2
50
- 50
300
- 55 to +150
ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Base Voltage
V_CBO
I_C=10µA, I_E=0
30
Collector Emitter Voltage
V_CEO
I_C=3mA, I_B=0
19
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
2
Collector Cut Off Current
I_CBO
V_CB=10V, I_E = 0
DC Current Gain
h_FE
I_C=10mA, V_CE=10V
40
Collector Emitter Saturation Voltage V_{CE (sat)}
I_C=20mA, I_B=4mA
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Collector Output Capacitance
Base Time Constant
Power Gain
SYMBOL TEST CONDITION
MIN
f_T
I_C=10mA, V_CE=10V
600
C_ob
I_E=0, V_CB=10V, f=1MHz
rbb' C_C
V_CB=10V, I_C=10mA,
f=31.8MHz
PG
V_CE=10V, I_C=5mA,
f=45MHz
f=200MHz
TYP
TYP
33
18
UNITS
V
V
V
mA
mA
mW
ºC
MAX
500
1
UNITS
V
V
V
nA
V
MAX
2
25
UNITS
MHz
pF
ps
dB
dB
CSC1906Rev_2 080903E
Continental Device India Limited
Data Sheet
Page 1 of 4