CSC1845 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC1845
TO-92
Plastic Package
ECB
For use as the middle range Amplifier in Hi-Fi and other similar Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
V_CEO
V_CBO
V_EBO
Base Current
IB
Collector Current
I_C
Power Dissipation @ T_a=25ºC
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
VALUE
120
120
5
10
50
500
+125
- 55 to + 125
UNITS
V
V
V
mA
mA
mW
ºC
ºC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut off Current
I_CBO
V_CB = 120V, I_E = 0
Emitter Cutoff Current
I_EBO
V_EB = 5.0V, Ic = 0
Collector Emitter Saturation Voltage V_CE(sat)
I_C = 10mA, I_B = 1.0mA
Base Emitter On Voltage
V_BE(on)
V_CE = 6.0V,Ic = 1.0mA
DC Current Gain
h_FE
V_CE = 6.0V, I_C = 0.1 mA
*h_FE
V_CE = 6.0V, I_C = 1.0 mA
Transition Frequency
f_T
V_CE = 6.0V, Ic = - 1.0mA
Output Capacitance
C_ob
V_CB = 30V, I_E =0, f = 1.0MHz
Noise Voltatge
NV
V_CE = 5.0V, I_C = - 1.0mA, R_G =100kΩ
G_V = 80 dB, f = 10 Hz to 1.0 KHz
MIN TYP
0.55
150
200
50
MAX
50
50
0.30
0.65
1200
2.5
40
UNITS
nA
nA
V
V
MHz
pF
mV
*h_FE Classifications
P : 200 - 400 F : 300 - 600 E : 400 - 800 U : 600 - 1200
Continental Device India Limited
Data Sheet
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