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| CSC1815 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CSC1815
TO-92
Plastic Package
ECB
Audio Frequency General Purpose and Driver Stage Amplifier Applications.
Complementary CSA1015
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Base Current
IB
Collector Power Dissipation
PC
Operating And Storage Junction
Tj, Tstg
Temperature Range
VALUE
60
50
5
150
50
625
-55 to +125
UNITS
V
V
V
mA
mA
mW
ºC
THERMAL RESISTANCE
Junction to case
Rth(j-c)
250
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
ICBO
VCB =60V, IE=0
Emitter Cut off Current
IEBO
VEB=5V, IC = 0
DC Current Gain
*hFE
IC =2mA, VCE=6V
70
hFE
IC =150mA, VCE=6V
25
Collector Emitter Saturation Voltage VCE(sat) IC=100mA, IB= 10mA
Base Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB= 10mA
TYP
MAX
100
100
700
0.25
1.0
UNITS
nA
nA
V
V
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
Base Spreading Resistance
Noise Figure
CLASSIFICATION
*hFE
CSC1815REV_3 281202D
ft
Cob
rbb'
NF
O
70 - 140
VCE=10V, IC=1mA,
f=100MHz
VCB=10V,IE=0,
f=1MHz
VCB=10V, IE=1mA,
f=30MHz
VCE=6V, IC=0.1mA,
Rg=10Kâ¦, f=1KHz
Y
120 - 240
80
50
GR
200 - 400
3
10
BL
350 - 700
MHz
pF
â¦
dB
Continental Device India Limited
Datasheet
Page 1 of 4
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