CSC1740 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON PLANAR TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL SILICON PLANAR TRANSISTOR
IS/ISO 9002
Lic# QSC/L- 000019.2
CSC 1740
TO-92
Plastic Package
General Small Signal Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
BV_CEO
Collector Base Voltage
BV_CBO
Emitter Base Voltage
Collector Current (DC)
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
BV_EBO
I_C
P_C
T_j, T_stg
VALUE
50(ORS)
40(E)
60(ORS)
50(E)
5
150
300
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector Emitter Voltage
V_CEO I_C=1mA,I_B=0
50(ORS)
40(E)
MAX
Collector Base Voltage
V_CBO I_C=50µA,I_E=0
60(ORS)
50(E)
Emitter Base Voltage
V_EBO I_E=50µA, I_C=0
5
Collector Cut off Current
I_CBO V_CB=30V, I_E = 0
0.5
Emitter Cut off Current
I_EBO
V_BE=4V, I_C = 0
0.5
DC Current Gain
h_FE
V_CE=6V,I_C=0.1mA
120
820
Collector Emitter Saturation
V_CE(sat) I_C=50mA,I_B=5.0mA
0.4
Voltage
UNIT
V
V
V
mA
mW
ºC
UNIT
V
V
V
V
µA
µA
µA
V
DYNAMIC CHARACTERISTICS
Transition Frequency
Collector Output Capacitance
f_T
I_C=2.0mA, V_CE=12V
f=100MHz
C_ob
I_E=0, V_CB=12V
f=1MHz
180
MHz
3.5
pF
* hFE CLASSIFICATION :
O : 120-270
R : 180-390
S: 270-560
E:390-820
Continental Device India Limited
Data Sheet
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