CSC1730 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL RF TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL RF TRANSISTOR
CSC1730
TO92
BCE
ECB
TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
30
15
5
50
250
150
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector -Base Voltage
VCBO
IC=10uA, IE=0
30
-
Collector -Emitter Voltage
VCEO IC=5mA, IB=0
15
-
Emitter Base Voltage
VEBO
IE=10uA, IC=0
5.0
-
Collector Cut off Current
ICBO
VCB=12V, IE=0
-
-
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA
-
-
DC Current Gain
hFE
IC=5mA,VCE=10V
40
-
Dynamic Characteristics
Transition Frequency
Output Capacitance
Collector - Base Time Constant
CLASSIFICATION
hFE
ft
Cob
Cc rbb'
R
40-80
VCE=10V,IC=5mA,
VCB=10V, IE=0
f=1MHz
VCE=10V, IE=5mA,
f=31.9MHz
O
70-140
800
-
-
Y
120-240
1100
-
10
UNIT
V
V
V
mA
mW
deg C
deg C
MAX
-
-
-
100
0.50
240
UNIT
V
V
V
nA
V
-
MHz
1.5
pF
20
ps
Continental Device India Limited
Data Sheet
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