CSC1684 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CSC1684, CSC1685
TO-92
Plastic Package
ECB
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Peak
Collector Current
Power Dissipation @ T_a=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_CP
I_C
P_C*
T_j
T_stg
*P_C=250mW/Potting type: P_C=250mW
CSC1684
25
30
7
200
100
400
150
- 55 to +150
CSC1685
50
60
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
I_CBO
V_CB=10V, I_E = 0
Collector Cut off Current
I_CEO
V_CE=10V, I_B = 0
Collector Base Voltage
V_CBO
I_C=10µA, I_E=0
CSC1684
30
CSC1685
60
Collector Emitter Voltage
V_CEO
I_C=2mA, I_B=0
CSC1684
25
CSC1685
50
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
7
DC Current Gain
h_FE*
V_CE=10V, I_C=2mA
160
h_FE
V_CE=2V, I_C=100mA
90
Collector Emitter Saturation Voltage
V_CE(sat)
I_C=100mA, I_B=10mA
Transition Frequency
f_T
I_C=2mA, V_CE=10V
Noise Figure
V_CE =10V, I_C=1mA,
NV
G_v=80dB R_g=100kΩ,
Function=FLAT
Output Capacitance
C_ob
I_E=0, V_CB=10V,f=1MHz
TYP
150
300
3.5
MAX
1.0
100
460
0.5
*h_FE Classifications
Q : 160 - 260 R : 200 - 340 S : 290 - 460
UNITS
V
V
V
mA
mA
mW
ºC
ºC
UNITS
µA
µA
V
V
V
V
V
V
MHz
mV
pF
Continental Device India Limited
Data Sheet
Page 1 of 3