CSC1047 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC1047
…
ECB
TO-92
Plastic Package
Suitable for RF Amplifier in FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T_a=25ºC
V_CEO
V_EBO
I_C
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
VALUE
30
20
3
15
*400
150
- 55 to +150
UNITS
V
V
V
mA
mW
ºC
ºC
*P_C=250mW / Potting type: P_C=250mW
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C = 10µA, I_E = 0
Emitter Base Voltage
V_EBO
I_E = 10µA, I_C = 0
DC Current Gain
*h_FE
V_CE = 6V, - I_C = 1mA
Transition Frequency
f_T
V_CE = 6V, - I _C= 1mA
Base Emitter On Voltage
V_BE(on)
V_CE = 6V, - I_C = 1mA
Common Emitter Reverse-
Transfer Capacitance
C_re
V_CB = 6V, - I_E = 1mA, f=10.7MHz
Power Gain
PG
V_CB =6V, - I_E = 1mA, f=100 MHz
Noise Figure
NF
V_CB =6V, - I_E = 1mA, f=100 MHz
MIN TYP MAX UNITS
30
V
3
V
40
260
450
MHz
0.72
V
1
pF
20
dB
5
dB
*h_FE Classifications
B : 40 - 110 C : 65 - 160 D : 100 - 260
Continental Device India Limited
Data Sheet
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