CSC1008 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSC1008 NPN
CSA708 PNP
TO-92
CBE
Low Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
80
60
8.0
700
800
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION CSC1008
Collector -Base Voltage
VCBO IC=100uA.IE=0
>80
Collector -Emitter Voltage
VCEO
IC=10mA,IB=0
>60
Emitter-Base Voltage
VEBO
IE=100uA, IC=0
>8.0
Collector-Cut off Current
ICBO
VCB=60V, IE=0
<100
Emitter-Cut off Current
IEBO
VEB=5V, IC=0
<100
DC Current Gain
hFE*
IC=50mA,VCE=2V
40-400
Collector Emitter Saturation Voltage VCE(Sat)* IC=500mA,IB=50mA <0.4
Base Emitter Saturation Voltage
VBE(Sat) * IC=500mA,IB=50mA <1.1
CSA708
>80
>60
>8.0
<100
<100
40-240
<0.7
<1.1
DYNAMIC CHARACTERISTICS
Transition Frequency
ft
IC=50mA, VCE=10V
>30
typ50
Out-Put Capacitance
Cob
VCB=10V, IE=0
typ8
typ13
f=1MHz
UNIT
V
V
V
mA
mW
deg C
UNIT
V
V
V
nA
nA
V
V
MHz
pF
*hFE CLASSIFICATION CSC1008 R : 40 - 80
CSA708 R : 40 - 80
*Pulse Test: PW=350us, Duty Cycle=2%
O : 70 -140
O : 70 -140
Y : 120-240
Y : 120-240
G : 200-400
Continental Device India Limited
Data Sheet
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