CSB892 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSB892
TO-92L
Plastic Package
Power Supplies, Relay Drivers, Lamp Drivers and Automotive Wiring Applications
Complementary CSD1207
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Peak Collector Current
I_CP
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature
T_stg
VALUE
60
50
6
2
4
1
150
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
I_C=10µA, I_E=0
60
I_C=1mA, I_B=0
50
I_E=10µA, I_C=0
6
V_CB =50V, I_E=0
V_EB=4V, I_C = 0
DC Current Gain
*h_FE
I_C =100mA, V_CE=2V
100
h_FE
I_C =1.5A, V_CE=2V
40
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=1A, I_B=50mA
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=1A, I_B=50mA
TYP
DYNAMIC CHARACTERISTICS
Transition Frequency
f_T
V_CE=10V, I_C=50mA
150
Output Capacitance
C_ob
V_CB=10V,I_E=0, f=1MHz
12
CLASSIFICATION
*h_FE
CSB892Rev020206E
R
100 - 200
S
140 - 280
T
200 - 400
UNITS
V
V
V
A
A
W
ºC
ºC
MAX
100
100
560
UNITS
V
V
V
nA
nA
0.7
V
1.2
V
MHz
pF
U
280 - 560
Continental Device India Limited
Data Sheet
Page 1 of 4