CSB834 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON POWER TRANSISTOR
CSB834
TO-220
Audio Frequency Power Amplifier Applications.
Complementary CSD880
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
60
Collector -Emitter Voltage
VCEO
60
Emitter- Base Voltage
VEBO
7.0
Collector Current
IC
3.0
Base Current
IB
0.5
Power Dissipation @ Ta=25 deg C
PC
1.5
Power Dissipation @ Tc=25 deg C
30
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Cut off Current
ICBO
VCB=60V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=7V, IC=0
-
-
Collector Emitter Voltage
VCEO
IC=50mA, IB=0
60
-
DC Current Gain
hFE
IC=0.5A, VCE=5V
60
-
IC=3A, VCE=5V
20
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=3A, IB=0.3A
-
-
Base Emitter on Voltage
VBE(on) IC=0.5A, VCE=5V
-
-
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.5A,
-
9.0
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
150
f=1MHz
Switching Time
Turn-0n Time
ton
VCC=30V,
-
0.4
Storage Time
tstg
IB1=IB2=0.2A,
-
1.7
Fall Time
tf
Pulse Width=20us
-
0.5
Duty Cycle=1%
hFE CLASSIFICATION:-
O : 60 -120, Y : 100 -200
MAX
100
100
-
200
-
1.0
1.0
-
-
-
-
-
UNIT
V
V
V
A
A
W
W
deg C
deg C
UNIT
uA
uA
V
V
V
MHz
pF
us
us
us
Continental Device India Limited
Data Sheet
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