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CSB772 Datasheet, PDF (1/3 Pages) Continental Device India Limited – Audio Frequency Power Amplifier and Low Speed Switching
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP PLASTIC POWER TRANSISTOR
CSB772
TO126
Plastic Package
ECB
Complementary CSD882
Audio Frequency Power Amplifier and Low Speed Switching
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Base Voltage(open emitter)
Collector Emitter Voltage (open base)
VCBO
VCEO
Emitter Base Voltage(open collector)
Collector Current (DC)
Collector Current (Pulse) (1)
Base Current (DC)
Total Power Dissipation@ Tc=25ºC
Total Power Dissipation@ Ta=25ºC
VEBO
IC
IC
IB
Ptot
Ptot
Junction Temperature
Tj
Storage Temperature
Tstg
VALUE
>40
>30
>5.0
<3.0
<7
<0.6
<10
<1.0
<150
-65 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector-Cut off Current
ICBO IE =0, VCB =30V
Emitter cut off Current
IEBO VEB =3V, IC =0
Breakdown Voltages
Saturation Voltages
DC Current Gain
VCEO IC =1mA, IB =0
VCBO IC =1mA, IE =0
VEBO IC =0, IE =1mA
VCE (sat)* IC=2A, IB=0.2A
VBE (sat)* IC=2A, IB=0.2A
hFE* IC=20mA,VCE=2V
hFE* IC=1.0A,VCE=2V**
MIN TYP MAX
1.0
1.0
30
40
5
0.5
2.0
30
60
400
Output Capacitance at f=1MHz
CO IE =0, VCB =10V
55
Transition Frequency
fT
IC=0.1A, VCE=5V
80
* Pulse test : pulse width < 350µs, Duty cycle < 2%
(1) PW = 10ms, Duty Cycle < 50%
**hFE classification : R :60-120 Q :100-200 P: 160-320 E: 200-400
UNIT
V
V
V
A
A
A
W
W
ºC
ºC
UNIT
µA
µA
V
V
V
V
V
pF
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3