CSB764PNP Datasheet, PDF (1/4 Pages) Continental Device India Limited – EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL PLANAR SILICON TRANSISTORS
CSB764 PNP
CSD863 NPN
TO-92L
Plastic Package
Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Peak Collector Current
I_CP
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature
T_stg
VALUE
60
50
5.0
1.0
2.0
0.9
150
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
V_CBO
V_CEO
V_EBO
I_CBO
I_C=10µA, I_E=0
60
I_C=1mA, I_B=0
50
I_E=10µA, I_C=0
5.0
V_CB=50V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
Collector Emitter Saturation Voltage
*h_FE
h_FE
V_{CE (sat)}
I_C=50mA, V_CE=2V
60
I_C=1A, V_CE=2V
30
I_C=500mA, I_B=50mA
NPN
PNP
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=500mA, I_B=50mA
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f_T
V_CE=10V, I_C=50mA
C_ob
V_CB=10V,I_E=0, f=1MHz
NPN
PNP
CLASSIFICATION
*h_FE
CSB764_CSD863Rev020206E
D
60 - 120
E
100 - 200
TYP MAX
1.0
1.0
320
0.5
0.7
1.2
TYP150
TYP12
TYP20
F
160 - 320
UNITS
V
V
V
A
A
W
ºC
ºC
UNITS
V
V
V
µA
µA
V
V
V
MHz
pF
pF
Continental Device India Limited
Data Sheet
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