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| CSB621 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CSB621, CSB621A
TO-92
Plastic Package
ECB
AF Output Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
Collector Current Peak
VEBO
ICP
Collector Current
IC
Power Dissipation @ Ta=25ºC
*PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
*PC=600mW/Potting type: PC=600mW
CSB621
25
30
5.0
1.5
1.0
750
150
- 55 to +150
CSB621A
50
60
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
ICBO
VCB=20V, IE = 0
Collector Base Voltage
VCBO
IC=10µA, IE=0
CSB621
30
CSB621A
60
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
CSB621
25
CSB621A
50
Emitter Base Voltage
DC Current Gain
VEBO
IE=10µA, IC=0
5
*hFE
VCE=10V, IC=500mA
85
hFE
VCE=5V, IC=1A
50
Collector Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
Base Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
Transition Frequency
Output Capacitance
fT
IC=50mA, VCE=10V
Cob
IE=0, VCB=10V,f=1MHz
TYP
200
MAX
0.1
340
0.4
1.2
30
*hFE Classifications
Q : 85 - 170 R : 120 - 240 S : 170 - 340
UNITS
V
V
V
A
A
mW
ºC
ºC
UNITS
µA
V
V
V
V
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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