CSB1626 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR
CSB1626
TO-220
Plastic Package
Complementary CSD2495
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
Collector -Base Voltage(open emitter)
Collector -Emitter Voltage(open base)
Emitter Base Voltage(open collector)
Collector Current
Base Current
Total Power Dissipation upto Tc=25ºC
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
VALUE
110
110
5.0
6.0
1.0
30
150
-65 to +150
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
I_CBO
V_CB=110V, I_E=0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C=0
Breakdown Voltages
V_CEO
I_C=30mA, I_B=0
Collector Emitter Saturation Voltage
V_CE(sat) I_C=5A, I_B=5mA
V_BE(sat) I_C=5A, I_B=5mA
DC Current Gain
h_FE
I_C=5A,V_CE=4V
O/P
h_FE
Transistors frequency
f_T
I_C=0.5A,V_CE=12V
Output Capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
UNIT
V
V
V
A
A
W
ºC
ºC
MIN TYP MAX UNIT
100
µA
2
mA
110
V
2.5
V
3
V
5
30
K
5
20
K
60
MHz
55
pF
Continental Device India Limited
Data Sheet
Page 1 of 3