CSB1426 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
CSB1426
TO-92
Plastic Package
ECB
Low Frequency Power Amplifier
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
Emitter Base Voltage
Collector Current
V_CBO
V_EBO
I_C
Collector Current Pulse
*I_C
Collector Power Dissipation
P_C
Operating And Storage Junction
Temperature Range
T_j, T_stg
VALUE
20
20
6
3
5
750
- 55 to +150
* Single pulse PW=10ms
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C=50µA, I_E=0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Emitter Base Voltage
V_EBO
I_E=50µA, I_C=0
Collector Cut off Current
I_CBO
V_CB=20V, I_E = 0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C = 0
DC Current Gain
h_FE
V_CE=2V, I_C=100mA
MIN
TYP
20
20
6
82
Collector Emitter Saturation Voltage **V_{CE (sat)}
I_C=2A, I_B=0.1A
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Output Capacitance
Classification
h_FE
**Pulse test
CSB1426 Rev_1 150405E
SYMBOL
f_T
C_ob
TEST CONDITION
MIN
TYP
I_C=0.5A, V_CE=2V,
240
f=100MHz
I_E=0, V_CB=10V, f=1MHz
35
P
82 - 180
Q
120 - 270
MAX
100
100
390
0.5
MAX
R
180 - 390
UNIT
V
V
V
A
A
mW
ºC
UNIT
V
V
V
nA
nA
V
UNIT
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 4