CSB1370 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL POWER TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON EPITAXIAL POWER TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSB1370
(9AW)
TO-220
MARKING : AS BELOW
Designed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
60
Collector -Emitter Voltage
VCEO
60
Emitter- Base Voltage
VEBO
5.0
Collector Current
IC
3.0
Peak
ICP
6.0
Power Dissipation @ Ta=25 deg C
PC
2.0
Power Dissipation @ Tc=25 deg C
30
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
60
-
Collector Base Voltage
VCBO
IC=50uA, IE=0
60
-
Emitter Base Voltage
VEBO
IE=50uA,IC=0
5.0
-
Collector Cut off Current
ICBO
VCB=60V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=4V,IC=0
-
-
Collector Emitter Saturation Voltage VCE(Sat) IC=2A,IB=0.2A
-
-
Base Emitter Saturation Voltage
VBE(Sat) IC=2A, IB=0.2A
-
-
DC Current Gain
hFE
IC=0.5A, VCE=5V
60
-
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.5A,
-
15
f=5MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
80
f=1MHz
MAX
-
-
-
10
10
1.5
1.5
320
-
-
hFE CLASSIFICATION:-
MARKING :
D : 60 -120;
CSB
1370
D
E : 100 -200
CSB
1370
E
F : 160 -320
CSB
1370
F
UNIT
V
V
V
A
A
W
W
deg C
deg C
UNIT
V
V
V
uA
uA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3