CSB1116 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSB1116
CSB1116A
TO-92
BCE
ECB
Audio Frequency Power Amplifier And Medium Speed Switching
Complementary CSD1616/1616A
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current DC
IC
Collector Current Pulse
IC*
Collector Dissipation
PC
Operating And Storage Junction
Tj, Tstg
Temperature Range
*PW=10ms, duty Cycle=50%
CSB1116 CSB1116A
60
80
50
60
6
1
2
0.75
55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
Collector Cut off Current
ICBO
VCB=60V, IE=0
-
Emitter Cut off Current
IEBO
VEB=6V, IC=0
-
DC Current Gain
CSB1116 hFE(1) * IC=100mA, VCE=2V
135
CSB1116A
135
hFE(2) * IC=1A, VCE=2V
81
Base Emitter On Voltage
VBE(on)* VCE=2V,IC=50mA
0.60
Collector Emitter Saturation Voltage VCE(Sat) * IC=1A, IB=50mA
-
Base Emitter Saturation Voltage
VBE(Sat) * IC=1A, IB=50mA
-
-
100
-
100
600
400
-
-
-
0.70
-
0.35
-
1.2
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
SWITCHING TIMES
Turn on time
Storage time
Fall time
ft
VCE=2V,IC=100mA,
70
Cob
VCB=10V, IE=0
-
f=1MHz
ton
VCC=10V,IC=100mA
-
tstg
IB1=IB2=10mA,
-
tf
VBE(off)2=3V
-
-
-
25
-
0.07
-
0.7
-
0.07
-
hFE(1) CLASSIFICATION CSB1116 Y: 135-270 G: 200-400 L: 300-600
*Pulse Test : PW=350us, Duty Cycle=2% Pulsed
UNIT
V
V
V
A
A
W
deg C
UNIT
nA
nA
V
V
V
MHz
pF
us
us
us
Continental Device India Limited
Data Sheet
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