English
Language : 

CSA966 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTOR
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
CSA966
TO-92
Plastic Package
Complementary CSC2236
Audio Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
IE
PC
Tj, Tstg
30
30
5
1.5
1.5
900
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
min
typ
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
Collector Emitter Saturation
Voltage
Base Emitter Voltage
ICBO VCB=30V, IE = 0
-
IEBO
VEB=5V, IC = 0
-
BVCEO IC=10mA, IB=0
30
VEBO IE=1mA, IC=0
5
hFE* VCE=2V, IC=500mA
100
VCE(sat) IC=1.5A, IB=0.03A
-
VBE
VCE=2V, IC=500mA
-
DYNAMIC CHARACTERISTICS
Transition Frequency
Collector Output Capacitance
Classification
hFE*
fT
IC=500mA, VCE=2V
-
120
Cob IE=0,VCB=10V,f=1MHz
-
O
Y
100 - 200
160 - 320
UNIT
V
V
V
A
A
mW
ºC
max
UNIT
100
nA
100
nA
-
V
-
V
320
2.0
V
1.0
V
-
MHz
30
pF
Continental Device India Limited
Data Sheet
Page 1 of 3