CSA709 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
CSA709 PNP
CSC1009 NPN
TO-92
CBE
High Voltage Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
SYMBOL
CSA709
CSC1009
Collector -Base Voltage
VCBO
160
160
Collector -Emitter Voltage
VCEO
150
140
Emitter -Base Voltage
VEBO
8.0
8.0
Collector Current
IC
700
700
Collector Dissipation
PC
800
800
Operating And Storage Junction
Tj, Tstg
-55 to +150
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION CSA709 CSC1009
Collector -Base Voltage
VCBO IC=100uA.IE=0
>160
>160
Collector -Emitter Voltage
VCEO
IC=10mA,IB=0
>150
>140
Emitter-Base Voltage
VEBO
IE=100uA, IC=0
>8.0
>8.0
Collector-Cut off Current
ICBO
VCB=60V, IE=0
-
<100
VCB=100V, IE=0
<100
-
Emitter-Cut off Current
IEBO
VEB=5V, IC=0
<100
<100
DC Current Gain
hFE*
IC=50mA,VCE=2V
40-400 40-400
Collector Emitter Saturation Voltage VCE(Sat)* IC=200mA,IB=20mA <0.4
<0.7
Base Emitter Saturation Voltage
VBE(Sat) * IC=200mA,IB=20mA <1.1
<1.1
DYNAMIC CHARACTERISTICS
Transition Frequency
ft
IC=50mA, VCE=10V typ50
>30
Out-Put Capacitance
Cob
VCB=10V, IE=0
<10
typ8.0
f=1MHz
UNIT
V
V
V
mA
mW
deg C
UNIT
V
V
V
nA
nA
nA
V
V
MHz
pF
*hFE CLASSIFICATION CSC1009 R : 40 - 80
CSA709
-
*Pulse Test: PW=350us, Duty Cycle=2%
O : 70 -140
O : 70 -140
Y : 120-240
Y : 120-240
G: 200-400
G: 200-400
Continental Device India Limited
Data Sheet
Page 1 of 3