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| CSA562 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL TRANSISTOR | |||
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON EPITAXIAL TRANSISTOR
CSA562
TO-92
Plastic Package
ECB
Audio Frequency Low Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector-Base Voltage
VCBO
35
Collector-Emitter Voltage
VCEO
30
Emitter-Base Voltage
VEBO
5
Collector Current
IC
500
Base Current
IB
100
Collector Power Dissipation
PC
625
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut Off Current
ICBO
VCB = 35V, IE = 0
Emitter Cut Off Current
IEBO
VEB = 5V, IC = 0
DC Current Gain
*hFE IC = 100mA, VCE = 1V
70
**hFE IC = 400mA, VCE = 6V
25
Collector Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA
Base Emitter Voltage
VBE(on) IC = 100mA, VCE = 1V
TYP MAX
100
100
240
0.25
1.0
DYNAMIC CHARACTERISTICS
Collector Output Capacitance
Transition Frequency
CLASSIFICATION
*hFE
**hFE
Cob
VCB = 6V, IE = 0,
f = 1MHz
ft
VCE = 6V, IC = 20mA
O : 70 - 140
O : 25 Min
13
200
Y : 120 - 240
Y : 40 Min
UNITS
V
V
V
mA
mA
mW
ºC
UNITS
nA
nA
V
V
pF
MHz
CSA562REV_1 281202D
Continental Device India Limited
Datasheet
Page 1 of 4
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