CSA537 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
CSA537
TO-39
Metal Can Package
MEDIUM SPEED SWITCHING AND LINEAR AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Emitter Current Contiuuous
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_E
P_D
T_j
T_stg
VALUE
50
60
5
0.7
0.7
0.75
200
-55 To +200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter(Sat) Voltage
Base Emitter (Sat) Voltage
DC Current Gain
Small Signal Current Gain
Output Capacitance
SYMBOL
B_VCBO
B_VCEO
BV_EBO
I_CBO
I_EBO
V_CE(Sat)
V_BE(Sat)
h_{FE (1)}
h_{FE (2)}
| h_fe |
C_ob
TEST CONDITION
I_C=10µA, I_E= 0
I_C=5mA, I_E=0
I_E=10mA, I_C=0
V_CB=30V, I_E=0
V_EB=3V, I_C=0
I_C=150mA,I_B=15mA
I_C=150mA,I_B=15mA
I_C=50mA,V_CE=4V
I_C=400mA,V_CE=4V
I_C=20mA, V_CE=10V,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
VALUE
>60
>50
>5
<50
<50
<0.5
<1.1
50-160
>20
>1.0
<35
UNITS
V
V
V
A
A
W
ºC
ºC
UNITS
V
V
V
nA
nA
V
V
V
V
pF
Continental Device India Limited
Data Sheet
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