CSA1887 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL POWER TRANSISTOR
CSA1887
TO-220
High Current Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
80
50
7.0
10
2.0
25
150
-55 to 150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
ICBO
IEBO
VCEO
hFE*
VCE(Sat)
VBE(Sat)
VCB=70V, IE=0
VEB=7V, IC=0
IC=10mA, IB=0
IC=1A, VCE=1V
IC=5A,IB=0.25A
IC=5A,IB=0.25A
-
-
1.0
-
-
1.0
50
-
-
120
-
400
-
- 0.50
-
-
1.4
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
ft
IC=1A, VCE=1V
-
45
-
Cob
VCB=10V, IE=0
-
215
-
f=1MHz
UNIT
V
V
V
A
W
W
deg C
deg C
UNIT
uA
uA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3