CSA1156 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL SILICON POWER TRANSISTOR
CSA1156
TO-126
Plastic Package
E _CB
High Voltage Switching and Low Power Switching Regulator
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation T_a=25ºC
Collector Dissipation T_c=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_B
I_C
I_CP
P_C
P_C
T_j
T_stg
Value
350
350
7.0
0.25
0.5
1.0
1.0
10
150
- 55 to +150
UNIT
V
V
V
A
A
A
W
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Emitter Voltage
V_CEX
I_C=1mA, I_B1= - I_B2= -20mA, V_BE(off) =
5V, L=10mH
Collector Cut Off Current
Emitter Cut off Current
Collector Cut Off Current
Collector Cut Off Current
*DC Current Gain
Collector Emitter Saturation Voltage
I_CBO
I_EBO
I_CEX1
I_CEX2
h_FE
V_{CE (sat)}
V_CB=350V, I_E=0
V_EB=5V, I_C=0
V_CE=350V, V_BE(off) =1.5V
V_CE=350V, V_BE(off) =1.5V, T_C=125ºC
I_C=100mA, V_CE=5V
I_C=100mA, I_B=10mA
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=100mA, I_B=10mA
MIN
350
350
30
SWITCHING TIME
Turn On Time
Storage Time
Fall Time
t_on
t_stg
t_f
V_CC=150V, I_C=100mA, I_B1= -
10mA,1_B2=20mA, R_L=1.5KΩ
MAX
100
10
100
1.0
200
1.0
1.2
1.0
4.0
1.0
UNIT
V
V
µA
µA
µA
mA
V
V
µs
µs
µs
h_FE Classification
CSA1156Rev220907E
N : 30 - 60 R : 40 - 80 O : 60 - 120 Y : 100 - 200
Continental Device India Limited
Data Sheet
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