CSA1020 Datasheet, PDF (1/3 Pages) Continental Device India Limited – COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
CSA1020 PNP
CSC2655 NPN
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_C
T_j, T_stg
50
50
5
2
900
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
min
typ
Collector Emitter Voltage
BV_CEO I_C=10mA,I_B=0
50
Collector Cut off Current
I_CBO V_CB=50V, I_E = 0
-
Emitter Cut off Current
I_EBO
V_EB=5V, I_C = 0
-
DC Current Gain
h_FE
V_CE=2V,I_C=500mA *
70
V_CE=2V,I_C=1.5A
40
Collector Emitter Saturation
V_CE(sat) I_C=1A, I_B=50mA
-
Voltage
Base Emitter Saturation Voltage
V_BE(sat) I_C=1A, I_B=50mA
-
DYNAMIC CHARACTERISTICS
Gain Bandwidth Product
Output Capacitance
Switching Time
Turn on Time
Storage Time
Fall Time
Classification
h_FE*
f_T
I_C=500mA, V_CE=2V
-
100
C_ob I_E=0, V_CB=10V,f=1MHz
PNP -
40
NPN -
30
t_on
V_CC=30V, I_B1=I_B2=
t_stg
50mA, R_L=30Ω
t_f
Duty Cycle=1%
O
70 - 140
-
0.1
-
1.0
-
0.1
Y
120 - 240
UNIT
V
V
V
A
mW
ºC
max
-
1.0
1.0
240
-
0.5
1.2
UNIT
V
µA
µA
V
V
-
MHz
-
P^F
-
P^F
-
us
-
us
-
us
Continental Device India Limited
Data Sheet
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