 English |
|
|
|
|
|
|
|
| CSA1015 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP EPITAXIAL PLANAR SILICON TRANSISTOR | |||
| |||
|
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSA1015
TO-92
Plastic Package
ECB
Audio Frequency General Purpose and Driver Stage Amplifier Applications.
Complementary CSC1815
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Base Voltage
VCBO
50
Collector Emitter Voltage
VCEO
50
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC
150
Base Current
IB
50
Collector Power Dissipation
PC
625
Operating And Storage Junction
Tj, Tstg
-55 to +125
Temperature Range
THERMAL RESISTANCE
Junction to case
Rth(j-c)
250
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
ICBO
VCB =50V, IE=0
Emitter Cut off Current
IEBO
VEB=5V, IC = 0
DC Current Gain
*hFE
IC =2mA, VCE=6V
70
hFE
IC =150mA, VCE=6V
25
Collector Emitter Saturation Voltage VCE(sat) IC=100mA,IB= 10mA
Base Emitter Saturation Voltage
VBE(sat)
IC=100mA,IB= 10mA
TYP MAX
100
100
400
0.30
1.1
DYNAMIC CHARACTERISTICS
Transition Frequency
Collector Output Capacitance
Base Spreading Resistance
Noise Figure
CLASSIFICATION
*hFE
ft
VCE=10V, IC=1mA,
80
f=100MHz
Cob
VCB=10V,IE=0,
7.0
f=1MHz
rbb'
VCB=10V, IE=1mA,
30
f=30MHz
NF
VCE=6V, IC=0.1mA,
10
Rg=10Kohms, f=1KHz
O
Y
GR
70 - 140
120 - 240
200 - 400
UNITS
V
V
V
mA
mA
mW
ºC
ºC/W
UNITS
nA
nA
V
V
MHz
pF
â¦
dB
CSA1015REV_5 281202D
Continental Device India Limited
Datasheet
Page 1 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese