CR13003 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CR13003
TO126
Plastic Package
E _CB
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation at T_a=25 ºC
Derate Above 25ºC
Power Dissipation at T_c=25 ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
P_D
T_j, T_stg
VALUE
700
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
R_{th (j-c)}
R_{th (j-a)}
T_L
3.12
89
275
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
Collector Emitter (sus) Voltage
*V_CEO(sus)
I_C=10mA, I_B=0
Collector Cut Off Current
I_CBO
V_CB=700V_, I_E=0
V_CB=700V_, I_E=0, T_c=100ºC
Emitter Cut Off Current
I_EBO
V_EB=9V, I_C=0
*Pulse Test: PW=300µs, Duty Cycle=2%
CR13003Rev230106E
ºC/W
ºC/W
ºC
MIN TYP MAX
600
400
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
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