CP756 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CP756 / CP757
TO-92
Plastic Package
EBC
Medium Power Transistors are Designed for Applications Requiring High Breakdown Voltage and Low Saturation Voltage
Complementary CN656 and CN657
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation at T_a=25ºC
Derate Above 25ºC
Power Dissipation at T_a=25ºC
Power Dissipation at T_C=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
*I_CM
I_C
P_D
**P_D
P_D
T_j, T_stg
CP756
200
200
5
1.0
0.5
0.9
7.2
1.1
2.2
CP757
300
300
- 65 to +150
UNIT
V
V
V
A
A
W
mW/ºC
W
W
ºC
Thermal Resistance
Junction to Ambient
Junction to Ambient
Junction to Case
R_{th (j-a) 1}
R_{th (j-a) 2+}
R_{th (j-c)}
138.8
113.6
56.8
* Consult safe operating area graph for conditions.
**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
CP756 200
CP757 300
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
CP756 200
CP757 300
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
5.0
Collector Cut Off Current
I_CBO
V_CB=160V, I_E=0
CP756
V_CB=200V, I_E=0
CP757
Emitter Cut Off Current
I_EBO
V_EB=3V, I_C=0
Collector Emitter Saturation Voltage *** VCE (sat)
I_C=100mA, I_B=10mA
Base Emitter Saturation Voltage
*** V_{BE (sat)}
I_C=100mA, I_B=10mA
Base Emitter On Voltage
*** V_{BE (on)}
I_C=100mA,V_CE=5V
DC Current Gain
*** h_FE
I_C=100mA,V_CE=5V
50
I_C=10mA,V_CE=5V
40
Transition Frequency
f_T
I_C=10mA, V_CE=20V, f=20MHz
30
Output Capacitance
C_obo
V_CB=20V, I_E=0, f=1MHz
MAX
100
100
100
0.5
1.0
1.0
20
***Pulse conditions. Pulse Width=300µs. Duty Cycle<2%
CP756_757Rev_2 120406E
ºC/W
ºC/W
ºC/W
UNIT
V
V
V
V
V
nA
nA
nA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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