CP754 Datasheet, PDF (1/5 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CP754 / CP755
TO-92
Plastic Package
EBC
Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and Audio
Amplifier
Complementary CN654 and CN655
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_C=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
*I_CM
I_C
P_D
**P_D
P_D
T_j, T_stg
CP754
125
125
5
2
1
0.9
7.2
1.1
2.2
CP755
150
150
- 65 to +150
UNIT
V
V
V
A
A
W
mW/ºC
W
W
ºC
Thermal Resistance
Junction to Ambient
Junction to Ambient
Junction to Case
R_{th (j-a) 1}
R_{th (j-a) 2+}
R_{th (j-c)}
138.8
113.6
56.8
* Consult safe operating area graph for conditions.
**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
CP754
125
CP755 150
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
CP754
125
CP755 150
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
5.0
Collector Cut Off Current
I_CBO
V_CB=100V, I_E=0
CP754
V_CB=125V, I_E=0
CP755
Emitter Cut Off Current
I_EBO
V_EB=3V, I_C=0
MAX
100
100
100
CP754_755Rev_2 211204E
ºC/W
ºC/W
ºC/W
UNIT
V
V
V
V
V
nA
nA
nA
Continental Device India Limited
Data Sheet
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