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CP752 Datasheet, PDF (1/5 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CP752 / CP753
TO-92
Plastic Package
EBC
Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and Audio
Amplifier
Complementary CN652 and CN653
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Ta=25ºC
Power Dissipation @ TC=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
*ICM
IC
PD
**PD
PD
Tj, Tstg
CP752
100
80
5
6
2
0.9
7.2
1.1
2.2
CP752
120
100
- 65 to +150
Thermal Resistance
Junction to Ambient
Junction to Ambient
Junction to Case
Rth (j-a) 1
Rth (j-a) 2+
Rth (j-c)
138.8
113.6
56.8
* Consult safe operating area graph for conditions.
**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Base Voltage
VCBO
IC=100µA, IE=0
CP752
100
CP753 120
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
CP752
80
CP753 100
Emitter Base Voltage
VEBO
IE=100µA, IC=0
5.0
Collector Cut Off Current
ICBO
VCB=80V, IE=0
CP752
VCB=80V, IE=0, Ta=100ºC
Emitter Cut Off Current
VCB=100V, IE=0
CP753
VCB=100V, IE=0,Ta=100ºC
IEBO
VEB=4V, IC=0
CP752_753Rev_2 211204E
MAX
100
10
100
10
100
UNIT
V
V
V
A
A
W
mW/ºC
W
W
ºC
ºC/W
ºC/W
ºC/W
UNIT
V
V
V
V
V
nA
µA
nA
µA
nA
Continental Device India Limited
Data Sheet
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