CP749 Datasheet, PDF (1/5 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CP749
TO-92
Plastic Package
EBC
Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and
Audio Amplifier
Complementary CN649
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_C=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_D
*P_D
P_D
T_j, T_stg
VALUE
35
25
5
6
2
0.9
7.2
1.1
2.2
- 65 to +150
UNITS
V
V
V
A
A
W
mW/ºC
W
W
ºC
* Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
25
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
35
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
5.0
Collector Cut Off Current
I_CBO
V_CB=30V, I_E=0
V_CB=30V, I_E=0, T_a=100ºC
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C=0
Collector Emitter Saturation Voltage **V_{CE (sat)}
I_C=1A, I_B=100mA
I_C=2A, I_B=200mA
Base Emitter Saturation Voltage
**V_{BE (sat)}
I_C=1A, I_B=100mA
Base Emitter on Voltage
**V_{BE (on)}
I_C=1A, V_CE=2V
DC Current Gain
**h_FE
I_C=50mA,V_CE=2V
70
I_C=1A, V_CE=2V
100
I_C=2A, V_CE=2V
75
I_C=6A, V_CE=2V
10
**Pulse Condition: Pulse Width = 300µs, Duty Cycle < 2%.
CP749_Rev2 211204E
MAX
100
10
100
0.3
0.6
1.25
1.0
300
UNITS
V
V
V
nA
µA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
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