CN8050 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
CN8050 NPN
CN8550 PNP
TO-92
Plastic Package
EBC
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation@ T_a=25ºC
Junction Temperature
Storage Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
*P_tot
T_j
T_stg
*R_{th (j-a)}
VALUE
25
40
6.0
800
1.0
100
625
150
- 55 to +150
200
* Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
ELECTRICAL CHARACTERISTICS (T_a=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Voltage
V_CEO
I_C=2mA, I_B=0
25
Collector Base Voltage
V_CBO
I_C=10µA, I_E=0
40
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
6
DC Current Gain
h_FE
V_CE=1V, I_C=5mA
45
V_CE=1V, I_C=100mA
120
CN8050C/CN8550C 120
CN8050D/CN8550D 160
TYP
V_CE=1V, I_C=350mA
60
Collector Cut off Current
I_CBO
V_CB=35V, I_E = 0
Emitter Cut off Current
Collector Emitter Saturation Voltage
I_EBO
V_CE(sat)
V_BE=3V, I_C = 0
I_C=500mA, I_B=50mA
Base Emitter Saturation Voltage
V_BE(sat)
I_C=500mA, I_B=50mA
Gain Bandwidth Product
f_T
I_C=10mA, V_CE=5V,
f=50MHz
100
Collector Base Capacitance
C_cbo
V_CB=10V, f=1MHz
PNP
NPN
MAX
300
200
300
100
100
0.5
1.2
35
20
UNITS
V
V
V
mA
A
mA
mW
ºC
ºC
K/W
UNITS
V
V
V
nA
nA
V
V
MHz
pF
pF
Continental Device India Limited
Data Sheet
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