CN652 Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN652 / CN653
TO-92
Plastic Package
E^BC
Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and
Audio Amplifier
Complementary CP752 and CP753
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_c=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
*I_CM
I_C
P_D
**P_D
P_D
T_j, T_stg
CN652
100
80
5
6
2
0.9
7.2
1.1
2.2
CN653
120
100
- 65 to +150
UNIT
V
V
V
A
A
W
mW/ºC
W
W
ºC
Thermal Resistance
Junction to Ambient
Junction to Ambient
Junction to Case
R_{th (j-a) 1}
R_{th (j-a) 2+}
R_{th (j-c)}
138.8
113.6
56.8
ºC/W
ºC/W
ºC/W
* Consult safe operating area graph for conditions.
**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
CN652 ₁₀₀
CN653 120
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
CN652 ₈₀
CN653 100
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
5.0
Collector Cut Off Current
I_CBO
V_CB=80V, I_E=0
CN652
V_CB=80V, I_E=0, T_a=100ºC
Emitter Cut Off Current
V_CB=100V, I_E=0
CN653
V_CB=100V, I_E=0,T_a=100ºC
I_EBO
V_EB=4V, I_C=0
CN652_653Rev_2 211204E
MAX
100
10
100
10
100
UNIT
V
V
V
V
V
nA
µA
nA
µA
nA
Continental Device India Limited
Data Sheet
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