CN452 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN452 / CN453
TO-92
Plastic Package
EBC
General Purpose Transistors designed for Small and Medium Signal Amplification
from D.C to Radio Frequencies
Complementary CP552 and CP553
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Base Current
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_c=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_D
*P_D
P_D
T_j, T_stg
CN452
100
80
5.0
2.0
1.0
200
0.8
1.0
2.0
CN453
120
100
- 65 to +150
UNITS
V
V
V
A
A
mA
W
W
W
ºC
*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=80V, I_E = 0
V_CB=100V, I_E = 0
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C = 0
Collector Emitter Saturation Voltage V_{CE (sat)}
I_C=150mA, I_B=15mA
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=150mA, I_B=15mA
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
DC Current Gain
*h_FE
V_CE=10V, I_C=150mA
V_CE=10V, I_C=1A
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL TEST CONDITION
Transition Frequency
Output Capacitance
f_T
V_CE=10V, I_C=50mA,
f=100MHz
C_obo V_CB=10V, I_E=0, f=1MHz
*Pulse Condition: Pulse Width = 300µs, Duty Cycle < 2%.
CN452_453Rev_2 211204E
CN452
<100
<100
<0.7
<1.3
>80
40 - 150
>10
CN452
>100
<15
CN453
<100
<100
<0.7
<1.3
>100
40 - 200
>10
UNITS
nA
nA
nA
V
V
V
CN453
>100
<15
UNITS
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 4