CN300 Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN300 / 301 / 302
CN303 / 304
TO-92
Plastic Package
EBC
General Purpose Audio Transistors
Complementary CP500 series
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Continuous Current
Base Current
Power Dissipation @ T_a=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
T_j, T_stg
CN300
25
25
CN301
35
35
CN302
35
35
5
500
100
300
- 65 to +150
CN303
45
45
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=V_CB (max)
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C = 0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
CN300
CN301/CN302
CN303
CN304
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=50mA, I_B=5mA
CN300/303/304
CN301/CN302
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=10mA, I_B=1mA
DC Current Gain
*h_FE I_C=100µA, V_CE=6V CN302
I_C=10mA, V_CE=6V
CN300/301/303/304
CN302
I_C=50mA, V_CE=6V CN302
*Pulse Condition: Pulse Width = 300µs, Duty Cycle < 2%.
CN300_304Rev_1 211204E
MIN
25
35
45
70
0.65
20
50
100
50
CN304
70
70
MAX
200
200
0.35
0.25
1.0
300
300
UNITS
V
V
V
mA
mA
mW
ºC
UNITS
nA
nA
V
V
V
V
V
V
V
V
Continental Device India Limited
Data Sheet
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